Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2141H-EL HAT2141H-EL

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 067795-HAT2141H-EL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15A (Ta) Max Gate Charge: 46nC @ 10V Max Input Capacitance: 3200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 27.5 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 067795-HAT2141H-EL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15A (Ta) Max Gate Charge: 46nC @ 10V Max Input Capacitance: 3200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 27.5 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2141H-EL - 067795-HAT2141H-EL - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2141H-EL
067795-HAT2141H-EL
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2141H-EL 067795-HAT2141H-EL
Manufacturer: Renesas Electronics America Win Source Part Number: 067795-HAT2141H-EL Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15A (Ta) Max Gate Charge: 46nC @ 10V Max Input Capacitance: 3200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 27.5 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 067795-HAT2141H-EL
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 15A (Ta)
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 3200pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27.5 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067795-HAT2141H-EL
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2141H-EL
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 20000 milliwatts
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