Manufacturer: Renesas Electronics America
Win Source Part Number: 092207-HAT2131R-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 350V
Continuous Drain Current at 25°C: 900mA (Ta)
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 460pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 450mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
N-Channel 350V 900mA (Ta) 2.5W (Ta) Surface Mount 8-SOP
MOSFET N-CH 350V 900MA 8SOP
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 092207-HAT2131R-EL-E | HAT2131R-EL-E-ND | HAT2131R-EL-E | 668-HAT2131R-EL-E | HAT2131R-EL-E |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2131R-EL-E | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 8SO | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 350 volts | 350 volts | |||
| PD | 2500 milliwatts | 2500 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) | |||
| Package Type | SOT3; 8-SOP | "8-SOIC (0.154"", 3.90mm Width)" | 460 pF @ 25 V |
