Manufacturer: Renesas Electronics America
Win Source Part Number: 204568-HAT2116H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 15W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30A (Ta)
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1650pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 30A (Ta) 15W (Tc) Surface Mount LFPAK
MOSFET N-CH 30V 30A LFPAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 204568-HAT2116H-EL-E | HAT2116H-EL-E-ND | HAT2116H-EL-E | HAT2116H-EL-E |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2116H-EL-E | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | |||
| PD | 15000 milliwatts |
