Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2096H-EL-E HAT2096H-EL-E

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 067789-HAT2096H-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Ta) Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.3 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2096H-EL-E - 067789-HAT2096H-EL-E - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - HAT2096H-EL-E-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2096H-EL-E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Renesas Electronics America Win Source Part Number: 067789-HAT2096H-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Ta) Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.3 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2096H-EL-E - 067789-HAT2096H-EL-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2096H-EL-E
067789-HAT2096H-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2096H-EL-E 067789-HAT2096H-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 067789-HAT2096H-EL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 20W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: LFPAK Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Ta) Max Gate Charge: 40nC @ 10V Max Input Capacitance: 2200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.3 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient

Manufacturer: Renesas Electronics America
Win Source Part Number: 067789-HAT2096H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Ta)
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 2200pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.3 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - HAT2096H-EL-E-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HAT2096H-EL-E-ND
Single FETs, MOSFETs HAT2096H-EL-E-ND
N-Channel 30V 40A (Ta) 20W (Tc) Surface Mount LFPAK

N-Channel 30V 40A (Ta) 20W (Tc) Surface Mount LFPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2096H-EL-E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT2096H-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT2096H-EL-E
MOSFET N-CH 30V 40A LFPAK

MOSFET N-CH 30V 40A LFPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 067789-HAT2096H-EL-E HAT2096H-EL-E-ND HAT2096H-EL-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2096H-EL-E Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 20000 milliwatts
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