Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2092R-EL-E HAT2092R-EL-E

Manufacturer: Renesas Electronics America
Win Source Part Number: 204567-HAT2092R-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 3W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 1400pF @ 10V
Maximum Rds On at Id,Vgs: 16 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient

Mosfet Array 2 N-Channel (Dual) 30V 11A 3W Surface Mount 8-SOP

MOSFET 2N-CH 30V 11A 8SOP Product overview: HAT2092R-EL-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-HAT2092R-EL-E can be used for catalog matching and distributor lookup.