Renesas Electronics Corporation Single FETs, MOSFETs HAT2088R-EL-E

Description
N-Channel 200V 2A (Ta) 2.5W (Ta) Surface Mount 8-SOP
Request a Quote Datasheet
Description
N-Channel 200V 2A (Ta) 2.5W (Ta) Surface Mount 8-SOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - HAT2088R-EL-E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HAT2088R-EL-E-ND
Single FETs, MOSFETs HAT2088R-EL-E-ND
N-Channel 200V 2A (Ta) 2.5W (Ta) Surface Mount 8-SOP

N-Channel 200V 2A (Ta) 2.5W (Ta) Surface Mount 8-SOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2088R-EL-E - 1042355-HAT2088R-EL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2088R-EL-E
1042355-HAT2088R-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2088R-EL-E 1042355-HAT2088R-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 1042355-HAT2088R-EL- E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2A (Ta) Max Gate Charge: 13nC @ 10V Max Input Capacitance: 450pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 440 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1042355-HAT2088R-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2A (Ta)
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 450pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 440 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2088R-EL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT2088R-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT2088R-EL-E
MOSFET N-CH 200V 2A 8SOP

MOSFET N-CH 200V 2A 8SOP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET, SO-8, Lead Free

MOSFET MOSFET, SO-8, Lead Free

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number HAT2088R-EL-E-ND 1042355-HAT2088R-EL-E HAT2088R-EL-E HAT2088R-EL-E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2088R-EL-E Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SOP 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 200 volts
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