Renesas Electronics Corporation Single FETs, MOSFETs HAT2088R-EL-E

N-Channel 200V 2A (Ta) 2.5W (Ta) Surface Mount 8-SOP

Manufacturer: Renesas Electronics America
Win Source Part Number: 1042355-HAT2088R-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2A (Ta)
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 450pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 440 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

MOSFET N-CH 200V 2A 8SOP Product overview: HAT2088R-EL-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HAT2088R-EL-E can be used for catalog matching and distributor lookup.