Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2038R-EL-E HAT2038R-EL-E

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 204566-HAT2038R-EL-E Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 3W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A Gate-Source Threshold Voltage: 2.2V @ 1mA Max Input Capacitance: 520pF @ 10V Maximum Rds On at Id,Vgs: 58 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Renesas Electronics America Win Source Part Number: 204566-HAT2038R-EL-E Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 3W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A Gate-Source Threshold Voltage: 2.2V @ 1mA Max Input Capacitance: 520pF @ 10V Maximum Rds On at Id,Vgs: 58 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2038R-EL-E - 204566-HAT2038R-EL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2038R-EL-E
204566-HAT2038R-EL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2038R-EL-E 204566-HAT2038R-EL-E
Manufacturer: Renesas Electronics America Win Source Part Number: 204566-HAT2038R-EL-E Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Maximum Power Dissipation: 3W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A Gate-Source Threshold Voltage: 2.2V @ 1mA Max Input Capacitance: 520pF @ 10V Maximum Rds On at Id,Vgs: 58 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 204566-HAT2038R-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 3W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5A
Gate-Source Threshold Voltage: 2.2V @ 1mA
Max Input Capacitance: 520pF @ 10V
Maximum Rds On at Id,Vgs: 58 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - HAT2038R-EL-E-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
HAT2038R-EL-E-ND
FET, MOSFET Arrays HAT2038R-EL-E-ND
Mosfet Array 2 N-Channel (Dual) 60V 5A 3W Surface Mount 8-SOP

Mosfet Array 2 N-Channel (Dual) 60V 5A 3W Surface Mount 8-SOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HAT2038R-EL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HAT2038R-EL-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HAT2038R-EL-E
MOSFET 2N-CH 60V 5A 8SOP

MOSFET 2N-CH 60V 5A 8SOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 204566-HAT2038R-EL-E HAT2038R-EL-E-ND HAT2038R-EL-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2038R-EL-E FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 60 volts
PD 3000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Single IGBTs - 448-AIKW50N65DH5XKSA1-ND - DigiKey
Infineon Technologies AG
Specs
TJ -40 to 175 C (-40 to 347 F)
Package Type TO-247; TO-247-3
Packing Method Tube
View Details
4 suppliers
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor - T1G4020036-FL - Qorvo
Specs
Transistor Technology / Material DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type NI-650 Flanged
View Details
2 suppliers
GaAs Fet Switches - KS207 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 15000 MHz
View Details