Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - H7N1002LS-E H7N1002LS-E

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 775573-H7N1002LS-E Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: SC-83 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Family Name: H7N1002LS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 4-LDPAK Channel Type Type: N Drain Source Voltage: 100V Gate Charge (Qg) (Maximum) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 9700pF @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 100W (Tc) Rds On (Maximum) @ Id, Vgs: 10 mOhm @ 37.5A, 10V Alternative Parts (Cross-Reference): AOB296L; STH80N10LF7-2AG; IRFS4610TRLPBF; STB120NF10; Introduction Date: March 20, 2006 ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - H7N1002LS-E - 775573-H7N1002LS-E - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - H7N1002LS-E-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - H7N1002LS-E - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 775573-H7N1002LS-E Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: SC-83 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Family Name: H7N1002LS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 4-LDPAK Channel Type Type: N Drain Source Voltage: 100V Gate Charge (Qg) (Maximum) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 9700pF @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 100W (Tc) Rds On (Maximum) @ Id, Vgs: 10 mOhm @ 37.5A, 10V Alternative Parts (Cross-Reference): AOB296L; STH80N10LF7-2AG; IRFS4610TRLPBF; STB120NF10; Introduction Date: March 20, 2006 ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - H7N1002LS-E - 775573-H7N1002LS-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - H7N1002LS-E
775573-H7N1002LS-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - H7N1002LS-E 775573-H7N1002LS-E
Manufacturer: Renesas Electronics America Win Source Part Number: 775573-H7N1002LS-E Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: SC-83 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Family Name: H7N1002LS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 4-LDPAK Channel Type Type: N Drain Source Voltage: 100V Gate Charge (Qg) (Maximum) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 9700pF @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 100W (Tc) Rds On (Maximum) @ Id, Vgs: 10 mOhm @ 37.5A, 10V Alternative Parts (Cross-Reference): AOB296L; STH80N10LF7-2AG; IRFS4610TRLPBF; STB120NF10; Introduction Date: March 20, 2006 ECCN: EAR99 Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 775573-H7N1002LS-E
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: SC-83
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Family Name: H7N1002LS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 4-LDPAK
Channel Type Type: N
Drain Source Voltage: 100V
Gate Charge (Qg) (Maximum) @ Vgs: 155nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 9700pF @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 100W (Tc)
Rds On (Maximum) @ Id, Vgs: 10 mOhm @ 37.5A, 10V
Alternative Parts (Cross-Reference): AOB296L; STH80N10LF7-2AG; IRFS4610TRLPBF; STB120NF10;
Introduction Date: March 20, 2006
ECCN: EAR99
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - H7N1002LS-E-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
H7N1002LS-E-ND
Single FETs, MOSFETs H7N1002LS-E-ND
N-Channel 100V 75A (Ta) 100W (Tc) Surface Mount LDPAK

N-Channel 100V 75A (Ta) 100W (Tc) Surface Mount LDPAK

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
H7N1002LS-E
MOSFET H7N1002LS-E
MOSFET N-Channel MOSFET - LDPAK(S)-(1)

MOSFET N-Channel MOSFET - LDPAK(S)-(1)

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - H7N1002LS-E - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
H7N1002LS-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs H7N1002LS-E
MOSFET N-CH 100V 75A 4LDPAK

MOSFET N-CH 100V 75A 4LDPAK

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Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 775573-H7N1002LS-E H7N1002LS-E-ND H7N1002LS-E H7N1002LS-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - H7N1002LS-E Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 100000 milliwatts
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