Renesas Electronics Corporation GA4L3M-T1-A

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon
  • GA4L3M-T1-A - Rochester Electronics
    Rochester Electronics
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon
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Datasheet
Datasheet Summary
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Resistor-built-in NPN silicon transistor in SC-70 package, with a collector-to-emitter voltage rating of 50 V, collector current of 0.1 A (DC), and total power dissipation of 0.15 W. Features a junction temperature limit of 150 °C and storage temperature range of -55 °C to +150 °C. Includes internal input resistor of 4.7 kΩ and emitter-to-base resistor of 4.7 kΩ. Compliant with standard industrial applications and does not specify RoHS, AEC-Q200, or other certifications.

Datasheet Summary
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Resistor-built-in NPN silicon transistor in SC-70 package, with a collector-to-emitter voltage rating of 50 V, collector current of 0.1 A (DC), and total power dissipation of 0.15 W. Features a junction temperature limit of 150 °C and storage temperature range of -55 °C to +150 °C. Includes internal input resistor of 4.7 kΩ and emitter-to-base resistor of 4.7 kΩ. Compliant with standard industrial applications and does not specify RoHS, AEC-Q200, or other certifications.

Suppliers

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Product
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- GA4L3M-T1-A - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
GA4L3M-T1-A
GA4L3M-T1-A
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number GA4L3M-T1-A
Polarity NPN
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