Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased FN4L4M-T1B-A

Description
Win Source Part Number: 1059535-FN4L4M-T1B-A Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Box Standard Package: 1 Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µ, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 22 Ohms Resistor - Emitter Base (R2): 22 Ohms HTSUS: 8541.21.0095 Mfr: Renesas Electronics America Inc Product Status: Obsolete
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1059535-FN4L4M-T1B-A - Win Source Electronics
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Description
Win Source Part Number: 1059535-FN4L4M-T1B-A Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Box Standard Package: 1 Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µ, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 22 Ohms Resistor - Emitter Base (R2): 22 Ohms HTSUS: 8541.21.0095 Mfr: Renesas Electronics America Inc Product Status: Obsolete
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1059535-FN4L4M-T1B-A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1059535-FN4L4M-T1B-A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1059535-FN4L4M-T1B-A
Win Source Part Number: 1059535-FN4L4M-T1B-A Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Box Standard Package: 1 Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µ, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 22 Ohms Resistor - Emitter Base (R2): 22 Ohms HTSUS: 8541.21.0095 Mfr: Renesas Electronics America Inc Product Status: Obsolete

Win Source Part Number: 1059535-FN4L4M-T1B-A
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Box
Standard Package: 1
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µ, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 22 Ohms
Resistor - Emitter Base (R2): 22 Ohms
HTSUS: 8541.21.0095
Mfr: Renesas Electronics America Inc
Product Status: Obsolete

Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FN4L4M-T1B-A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FN4L4M-T1B-A
TRANS PREBIAS NPN 50V 0.1A

TRANS PREBIAS NPN 50V 0.1A

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Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 1059535-FN4L4M-T1B-A FN4L4M-T1B-A
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3
IC(max) 100 milliamps 100 milliamps
Power Gain 85 dB
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