Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1001999-FA1L3N(T1B-A
Categories: RF Transistors(BJT)
Popularity: Low
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Shortage
RoHS: Compliant
Collector Emitter Voltage (VCEO): 50 V
Trans Digital BJT NPN 50V 100mA 3-Pin Mini-Mold T/R Product overview: FA1L3N(T1B-A) from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-FA1L3N(T1B-A) can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1001999-FA1L3N(T1B-A) | 283-FA1L3N(T1B-A) |
| Product Name | TRANSISTORS - RF Transistors (BJT) - FA1L3N(T1B-A) | 50V 100mA Bipolar Transistor |
| Package Type | SOT3 |
