Renesas Electronics Corporation FA1A4M-T1B-AT

The FA1A4M is a resistor-built-in NPN silicon transistor for medium-speed switching in standard-grade electronics. It is packaged in a mini mold case measuring 2.8 mm × 2.0 mm × 1.5 mm with three pins. The device has a collector-to-emitter voltage rating of 50 V, a collector current of 100 mA (DC), and a power dissipation of 200 mW at 25 °C. The junction temperature ranges from -55 °C to +150 °C. DC current gain is 35 to 100 at 5 mA and 80 to 230 at 50 mA. Collector saturation voltage is 0.05 to 0.2 V. Input resistors R1 and R2 are 7.0 to 13 kΩ with a ratio of 0.9 to 1.1. Switching times are specified under pulsed conditions. The part is classified as Standard quality and complies with RoHS. It is complementary to the FN1A4M.