Renesas Electronics Corporation Integrated Circuits (ICs) - Memory CDP1821CD3

Description
1024-WORD X 1-BIT SRAM
Description
1024-WORD X 1-BIT SRAM

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - CDP1821CD3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
CDP1821CD3
Integrated Circuits (ICs) - Memory CDP1821CD3
1024-WORD X 1-BIT SRAM

1024-WORD X 1-BIT SRAM

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips
Product Number CDP1821CD3
Product Name Integrated Circuits (ICs) - Memory
Memory Category Volatile; SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V2556S100PF - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 5 ns
Density 4500 kbits
View Details
Memory - 5962F1120102QXA - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category SRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
View Details
2 suppliers
Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - PAL16R6BJ/883 - Quarktwin Technology Ltd.
Texas Instruments
View Details
2 suppliers