Renesas Electronics Corporation Bipolar RF Transistors CA3227M

The CA3227M is a monolithic array of five NPN transistors on a common substrate, designed for high-frequency low-power applications up to 1.5GHz. It is packaged in a 16-lead SOIC with dimensions of 9.80 to 10.00mm in length and 3.80 to 4.00mm in width. Each transistor has a gain-bandwidth product exceeding 3GHz, a collector-to-emitter voltage rating of 8V, and a maximum collector current of 20mA. The device operates from -55°C to 125°C with a maximum junction temperature of 150°C. Thermal resistance is 185°C/W. The transistors exhibit close electrical and thermal matching due to monolithic construction.