Renesas Electronics Corporation Bipolar RF Transistors CA3127MZ

Description
RF Transistor 5 NPN 15V 20mA 1.15GHz 85mW Surface Mount 16-SOIC
  • Bipolar RF Transistors - CA3127MZ-ND - DigiKey
    DigiKey
  • TRANSISTORS - RF Transistors (BJT) - CA3127MZ - 1027571-CA3127MZ - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - CA3127MZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
RF Transistor 5 NPN 15V 20mA 1.15GHz 85mW Surface Mount 16-SOIC
Request a Quote Datasheet

Suppliers

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Product
Description
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Bipolar RF Transistors - CA3127MZ-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
CA3127MZ-ND
Bipolar RF Transistors CA3127MZ-ND
RF Transistor 5 NPN 15V 20mA 1.15GHz 85mW Surface Mount 16-SOIC

RF Transistor 5 NPN 15V 20mA 1.15GHz 85mW Surface Mount 16-SOIC

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - CA3127MZ - 1027571-CA3127MZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - CA3127MZ
1027571-CA3127MZ
TRANSISTORS - RF Transistors (BJT) - CA3127MZ 1027571-CA3127MZ
Manufacturer: Intersil Win Source Part Number: 1027571-CA3127MZ Packaging: Tube/Rail Mounting: SMD (SMT) Gain: 27dB to 30dB Frequency - Transition: 1.15GHz Transistor Polarity: 5 NPN Noise Figure (dB Typ @ f): 3.5dB @ 100MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 16-SOIC Maximum Current Collector: 20mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 35 @ 5mA, 6V Maximum Power Dissipation: 85mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited Quantity per package: 48

Manufacturer: Intersil
Win Source Part Number: 1027571-CA3127MZ
Packaging: Tube/Rail
Mounting: SMD (SMT)
Gain: 27dB to 30dB
Frequency - Transition: 1.15GHz
Transistor Polarity: 5 NPN
Noise Figure (dB Typ @ f): 3.5dB @ 100MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-SOIC
Maximum Current Collector: 20mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 35 @ 5mA, 6V
Maximum Power Dissipation: 85mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Quantity per package: 48

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - CA3127MZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
CA3127MZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) CA3127MZ
RF TRANS 5NPN 15V 1.15GHZ 16SOIC

RF TRANS 5NPN 15V 1.15GHZ 16SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors
Product Number CA3127MZ-ND 1027571-CA3127MZ CA3127MZ
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - CA3127MZ Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; 5 NPN
Package Type "16-SOIC (0.154"", 3.90mm Width)" SOT3; 16-SOIC
Packing Method Rail; Tube; Tube/Rail Tube; Tube
TJ 150 C (302 F)
Power Gain 35 dB
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