Renesas Electronics Corporation TRANSISTORS - Transistors (BJT) - Arrays - CA3083 CA3083

Description
Manufacturer: Intersil Win Source Part Number: 130967-CA3083 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 450MHz Transistor Polarity: 5 NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 16-PDIP Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Max Vce (sat): 700mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 40 @ 50mA, 3V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 25
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Description
Manufacturer: Intersil Win Source Part Number: 130967-CA3083 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 450MHz Transistor Polarity: 5 NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 16-PDIP Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Max Vce (sat): 700mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 40 @ 50mA, 3V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 25
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - CA3083 - 130967-CA3083 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - CA3083
130967-CA3083
TRANSISTORS - Transistors (BJT) - Arrays - CA3083 130967-CA3083
Manufacturer: Intersil Win Source Part Number: 130967-CA3083 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 450MHz Transistor Polarity: 5 NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 16-PDIP Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Max Vce (sat): 700mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 40 @ 50mA, 3V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Quantity per package: 25

Manufacturer: Intersil
Win Source Part Number: 130967-CA3083
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 450MHz
Transistor Polarity: 5 NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-PDIP
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Max Vce (sat): 700mV @ 5mA, 50mA
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 40 @ 50mA, 3V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Quantity per package: 25

Buy Now Datasheet
Bipolar Transistor Arrays - CA3083-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
CA3083-ND
Bipolar Transistor Arrays CA3083-ND
Bipolar (BJT) Transistor Array 5 NPN 15V 100mA 450MHz 500mW Through Hole 16-PDIP

Bipolar (BJT) Transistor Array 5 NPN 15V 100mA 450MHz 500mW Through Hole 16-PDIP

Buy Now Datasheet
Bipolar Transistor Arrays - CA3083 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
CA3083
Bipolar Transistor Arrays CA3083
TRANS 5NPN 15V 0.1A 16DIP

TRANS 5NPN 15V 0.1A 16DIP

Supplier's Site Datasheet
Bipolar Transistor Array; Transistor Polarity Renesas - 06F2047 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor Array; Transistor Polarity Renesas
06F2047
Bipolar Transistor Array; Transistor Polarity Renesas 06F2047
BIPOLAR TRANSISTOR ARRAY; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; DC Collector Current:100mA; Power Dissipation Pd:500mW; DC Current Gain hFE:76hFE; No. of Pins:16Pins; Transistor Mounting:Through Hole; MSL:-RoHS Compliant: No

BIPOLAR TRANSISTOR ARRAY; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; DC Collector Current:100mA; Power Dissipation Pd:500mW; DC Current Gain hFE:76hFE; No. of Pins:16Pins; Transistor Mounting:Through Hole; MSL:-RoHS Compliant: No

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - CA3083 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
CA3083
Discrete Semiconductor Products - Transistors - Bipolar (BJT) CA3083
TRANS 5NPN 15V 0.1A 16DIP

TRANS 5NPN 15V 0.1A 16DIP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 130967-CA3083 CA3083-ND CA3083 06F2047 CA3083
Product Name TRANSISTORS - Transistors (BJT) - Arrays - CA3083 Bipolar Transistor Arrays Bipolar Transistor Arrays Bipolar Transistor Array; Transistor Polarity Renesas Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; 5 NPN NPN 5 NPN; NPN
Package Type SOT3; 16-PDIP "16-DIP (0.300"", 7.62mm)" 16-DIP (0.300", 7.62mm) TO-3
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 15 volts 15 volts
Operating Frequency 450 MHz
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