Renesas Electronics Corporation Memory AT45DB641E-CCUN-T

Description
FLASH Memory IC 64Mb (264 Bytes x 32K pages) SPI 85MHz 9-UBGA (6x6)
Request a Quote Datasheet
Description
FLASH Memory IC 64Mb (264 Bytes x 32K pages) SPI 85MHz 9-UBGA (6x6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - AT45DB641E-CCUN-TTR-ND - DigiKey
Thief River Falls, MN, United States
FLASH Memory IC 64Mb (264 Bytes x 32K pages) SPI 85MHz 9-UBGA (6x6)

FLASH Memory IC 64Mb (264 Bytes x 32K pages) SPI 85MHz 9-UBGA (6x6)

Buy Now Datasheet
IC FLASH 64MBIT SPI 85MHZ 9UBGA

IC FLASH 64MBIT SPI 85MHZ 9UBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT45DB641E-CCUN-T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AT45DB641E-CCUN-T
Integrated Circuits (ICs) - Memory - Memory AT45DB641E-CCUN-T
IC FLASH 64MBIT SPI 85MHZ 9UBGA

IC FLASH 64MBIT SPI 85MHZ 9UBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number AT45DB641E-CCUN-TTR-ND AT45DB641E-CCUN-T AT45DB641E-CCUN-T
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash; Flash Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits
Package Type 9-UBGA BGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 315-1345-000 AAA - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 1882660 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details