Renesas Electronics Corporation Memory AT25SL321-SHE-T

Description
IC FLASH 32MBIT SPI/QUAD 8SOIC
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Description
IC FLASH 32MBIT SPI/QUAD 8SOIC
Request a Quote
Datasheet
Datasheet Summary
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The AT25SL321-SHE-T is a 32-Mbit SPI Serial Flash Memory device from Quarktwin Technology Ltd. It operates with a single supply voltage ranging from 1.7 V to 2.0 V and supports various interfaces including SPI, Dual I/O, Quad I/O, and QPI, with a maximum operating frequency of 104 MHz. The device features a high-speed data transfer rate of up to 65 Mbytes/s and has a low power dissipation profile, with typical deep power-down and standby currents of 2 ¬µA and 10 ¬µA, respectively. The memory supports flexible programming options, including byte/page programming and dual or quad input programming, with a typical page program time of 0.6 ms for 256 bytes. It also includes robust erase capabilities, with typical block erase times of 60 ms for 4-kbyte blocks and 200 ms for 32-kbyte blocks. The AT25SL321-SHE-T is designed for industrial applications, offering an endurance of 100,000 program/erase cycles and a data retention period of 20 years, operating within an industrial temperature range of -40 ¬8C to +85 ¬8C. The device is available in multiple package options, including an 8-lead SOIC (208 mil) configuration.

Datasheet Summary
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The AT25SL321-SHE-T is a 32-Mbit SPI Serial Flash Memory device from Quarktwin Technology Ltd. It operates with a single supply voltage ranging from 1.7 V to 2.0 V and supports various interfaces including SPI, Dual I/O, Quad I/O, and QPI, with a maximum operating frequency of 104 MHz. The device features a high-speed data transfer rate of up to 65 Mbytes/s and has a low power dissipation profile, with typical deep power-down and standby currents of 2 ¬µA and 10 ¬µA, respectively. The memory supports flexible programming options, including byte/page programming and dual or quad input programming, with a typical page program time of 0.6 ms for 256 bytes. It also includes robust erase capabilities, with typical block erase times of 60 ms for 4-kbyte blocks and 200 ms for 32-kbyte blocks. The AT25SL321-SHE-T is designed for industrial applications, offering an endurance of 100,000 program/erase cycles and a data retention period of 20 years, operating within an industrial temperature range of -40 ¬8C to +85 ¬8C. The device is available in multiple package options, including an 8-lead SOIC (208 mil) configuration.

Suppliers

Company
Product
Description
Supplier Links
Memory - 1695-AT25SL321-SHE-TTR-ND - DigiKey
Thief River Falls, MN, United States
IC FLASH 32MBIT SPI/QUAD 8SOIC

IC FLASH 32MBIT SPI/QUAD 8SOIC

Buy Now Datasheet
Memory - 1695-AT25SL321-SHE-TCT-ND - DigiKey
Thief River Falls, MN, United States
IC FLASH 32MBIT SPI/QUAD 8SOIC

IC FLASH 32MBIT SPI/QUAD 8SOIC

Buy Now Datasheet
Memory - AT25SL321-SHE-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR (SLC) Memory IC 32Mbit SPI - Quad I/O, QPI 104 MHz 7 ns 8-SOIC

FLASH - NOR (SLC) Memory IC 32Mbit SPI - Quad I/O, QPI 104 MHz 7 ns 8-SOIC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - AT25SL321-SHE-T - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
AT25SL321-SHE-T
Integrated Circuits (ICs) - Memory - Memory AT25SL321-SHE-T
32 MBIT, 1.8V (1.7V TO 2V), -40?

32 MBIT, 1.8V (1.7V TO 2V), -40?

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 1695-AT25SL321-SHE-TTR-ND AT25SL321-SHE-T AT25SL321-SHE-T
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash; FLASH Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 32000 kbits 32000 kbits 4000 kbits
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4 suppliers