Renesas Electronics Corporation Memory AT25QL128A-UIUE-T

Description
128 MBIT, 1.8V, -40C TO 85C, QUA
Description
128 MBIT, 1.8V, -40C TO 85C, QUA
Datasheet
Datasheet Summary
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The AT25QL128A-UIUE-T is a 128-Mbit SPI serial flash memory device from Quarktwin Technology Ltd. It operates with a single supply voltage ranging from 1.7 V to 2.0 V and supports various interfaces including SPI, Dual I/O, Quad I/O, and QPI. The device can achieve a maximum operating frequency of 133 MHz and offers a clock-to-output time of 6 ns, enabling data transfer rates of up to 65 Mbytes/s. This memory chip features a flexible erase architecture suitable for code and data storage applications, with typical page program times of 0.6 ms for 256 bytes and block erase times ranging from 60 ms to 350 ms depending on the block size. It includes hardware-controlled locking of status registers, a secured one-time programmable security register, and hardware write protection. The AT25QL128A-UIUE-T is designed for low power consumption, with a typical deep power-down current of 2 ¬µA and standby current of 10 ¬µA. It has an endurance of 100,000 program/erase cycles and a data retention period of 20 years, making it suitable for industrial applications with an operating temperature range of -40 ¬8C to +85 ¬8C. The device is available in a 21-ball WLCSP package, compliant with RoHS standards.

Datasheet Summary
Powered by GS/AI

The AT25QL128A-UIUE-T is a 128-Mbit SPI serial flash memory device from Quarktwin Technology Ltd. It operates with a single supply voltage ranging from 1.7 V to 2.0 V and supports various interfaces including SPI, Dual I/O, Quad I/O, and QPI. The device can achieve a maximum operating frequency of 133 MHz and offers a clock-to-output time of 6 ns, enabling data transfer rates of up to 65 Mbytes/s. This memory chip features a flexible erase architecture suitable for code and data storage applications, with typical page program times of 0.6 ms for 256 bytes and block erase times ranging from 60 ms to 350 ms depending on the block size. It includes hardware-controlled locking of status registers, a secured one-time programmable security register, and hardware write protection. The AT25QL128A-UIUE-T is designed for low power consumption, with a typical deep power-down current of 2 ¬µA and standby current of 10 ¬µA. It has an endurance of 100,000 program/erase cycles and a data retention period of 20 years, making it suitable for industrial applications with an operating temperature range of -40 ¬8C to +85 ¬8C. The device is available in a 21-ball WLCSP package, compliant with RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
128 MBIT, 1.8V, -40C TO 85C, QUA

128 MBIT, 1.8V, -40C TO 85C, QUA

Supplier's Site Datasheet
Memory - AT25QL128A-UIUE-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 128Mbit SPI - Quad I/O, QPI 133 MHz 6 ns 21-WLCSP (3.02x3.29)

FLASH Memory IC 128Mbit SPI - Quad I/O, QPI 133 MHz 6 ns 21-WLCSP (3.02x3.29)

Buy Now Datasheet
Memory - AT25QL128A-UIUE-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH Memory IC 128Mbit SPI - Quad I/O, QPI 133 MHz 6 ns 21-WLCSP (3.02x3.29)

FLASH Memory IC 128Mbit SPI - Quad I/O, QPI 133 MHz 6 ns 21-WLCSP (3.02x3.29)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number AT25QL128A-UIUE-T AT25QL128A-UIUE-T
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 6 ns 6 ns
Density 128000 kbits 128000 kbits
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