The 71V67803S133BG is a 3.3V synchronous SRAM memory device from Quarktwin Technology Ltd., organized as 512K x 18 bits. It supports high-speed operation with a maximum clock frequency of 133 MHz and a clock access time of 4.2 ns. The device features pipelined outputs and a burst mode capability, allowing for efficient data transfer by providing four cycles of data for a single address input. It includes a global write control and individual byte write enables, facilitating flexible data handling. The memory operates with a core power supply of 3.3V and has a separate 3.3V I/O supply. It is available in multiple package types, including a 119-ball grid array (BGA) and a 100-pin thin plastic quad flatpack (TQFP), making it suitable for various applications. The device also incorporates power-down functionality controlled by a ZZ input, ensuring low power consumption during inactive periods. This product is designed for both commercial and industrial temperature ranges, making it versatile for different environments.
SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 133MHz 4.2ns 119-PBGA (14x22)
IC SRAM 9MBIT PARALLEL 119PBGA Product overview: 71V67803S133BG from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V67803S133BG can be used for catalog matching and distributor lookup.
IC SRAM 9MBIT PARALLEL 119PBGA
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)
IC SRAM 9MBIT PARALLEL 119PBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V67803S133BG-ND | 774-71V67803S133BG | 71V67803S133BG | 71V67803S133BG | 71V67803S133BG |
| Product Name | Memory | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 9000 kbits | 9000 kbits | 9000 kbits | 9000 kbits | |
| Package Type | BGA; 119-BGA | BGA; Tray | BGA; 119-BGA |
