The 71V67703S75BQGI is a 9Mbit synchronous SRAM memory device from Quarktwin Technology Ltd., organized as 256K x 36 or 512K x 18 configurations. It operates at a core voltage of 3.3V and supports fast access times of 7.5ns at a clock frequency of up to 117MHz. The device features a flow-through architecture with no registers in the data output path, allowing for efficient data transfer. It includes a burst mode capability, enabling four cycles of data output for a single address, which enhances performance for applications requiring high-speed data access. The memory supports various control inputs, including global write control, byte write enables, and chip select options, facilitating flexible integration into different systems. It is available in multiple package types, including a 165-ball CABGA and a 100-pin TQFP, catering to different design requirements. The device is suitable for both commercial and industrial temperature ranges, with an operational range from -40¬8C to +85¬8C for selected speeds. Additionally, green parts are available, aligning with environmental considerations in product selection.
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 117MHz 7.5ns 165-CABGA (13x15)
IC SRAM 9MBIT PARALLEL 165CABGA
IC SRAM 9MBIT PAR 165CABGA
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 117 MHz 7.5 ns 165-CABGA (13x15)
| DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V67703S75BQGI-ND | 71V67703S75BQGI | 71V67703S75BQGI | 71V67703S75BQGI |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 9000 kbits | 9000 kbits | 256 kbits | 9000 kbits |
