The 71V67603S150BGI is a 3.3V synchronous SRAM with a memory configuration of 256K x 36 bits. It operates at a clock speed of 150 MHz, providing a clock access time of 3.8 ns. This memory device features pipelined outputs and supports burst mode operation, allowing for efficient data transfer by providing four cycles of data for a single address input. The SRAM includes write, data, address, and control registers, enabling self-timed write cycles. It is packaged in a 119-ball grid array (BGA) format, adhering to JEDEC standards, and is suitable for both commercial and industrial temperature ranges. The device also includes power management features, such as a power-down mode controlled by the ZZ input, making it suitable for applications requiring low power consumption.
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 150MHz 3.8ns 119-PBGA (14x22)
IC SRAM 9MBIT PAR 150MHZ 119PBGA
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 150 MHz 3.8 ns 119-PBGA (14x22)
IC SRAM 9MBIT PARALLEL 119PBGA
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V67603S150BGI-ND | 71V67603S150BGI | 71V67603S150BGI | 71V67603S150BGI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 9000 kbits | 256 kbits | 9000 kbits | 9000 kbits |
