Renesas Electronics Corporation Memory 71V67603S133BQI8

Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 165-CABGA (13x15)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 165-CABGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V67603S133BQI8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 165-CABGA (13x15)

SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 165-CABGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V67603S133BQI8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V67603S133BQI8
Integrated Circuits (ICs) - Memory - Memory 71V67603S133BQI8
IC SRAM 9MBIT PARALLEL 165CABGA

IC SRAM 9MBIT PARALLEL 165CABGA

Supplier's Site
Memory - 71V67603S133BQI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 133 MHz 4.2 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 133 MHz 4.2 ns 165-CABGA (13x15)

Buy Now Datasheet
IC SRAM 9MBIT PARALLEL 165CABGA

IC SRAM 9MBIT PARALLEL 165CABGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V67603S133BQI8-ND 71V67603S133BQI8 71V67603S133BQI8 71V67603S133BQI8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type 165-TBGA BGA BGA; 165-TBGA
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