Renesas Electronics Corporation Memory 71V67603S133BGGI

Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 119-PBGA (14x22)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 119-PBGA (14x22)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V67603S133BGGI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 119-PBGA (14x22)

Buy Now Datasheet
Memory - 71V67603S133BGGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)

Buy Now Datasheet
IC SRAM 9MBIT PARALLEL 119PBGA

IC SRAM 9MBIT PARALLEL 119PBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V67603S133BGGI-ND 71V67603S133BGGI 71V67603S133BGGI
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-3329-02-T - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 5962-8961415QXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 45 ns
Density 1000 kbits
View Details
SDRAM - 2420773P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details