The 71V67603S133BGG is a 3.3V synchronous SRAM with a memory configuration of 256K x 36 bits. It operates at a maximum clock speed of 133 MHz, providing a clock access time of 4.2 ns. This memory device features pipelined outputs and supports burst mode operation, allowing for efficient data transfer by providing four cycles of data for a single address input. The SRAM includes write, data, address, and control registers, with self-timed write capabilities. It is packaged in a 119-ball grid array (BGA) format, adhering to JEDEC standards. The device is suitable for both commercial and industrial temperature ranges, making it versatile for various applications. The power-down feature is controlled by the ZZ input, ensuring low power consumption during inactive periods.
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 133MHz 4.2ns 119-PBGA (14x22)
IC SRAM 9MBIT PARALLEL 119PBGA
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)
IC SRAM 9MBIT PARALLEL 119PBGA
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V67603S133BGG-ND | 71V67603S133BGG | 71V67603S133BGG | 71V67603S133BGG |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 9000 kbits | 9000 kbits | 9000 kbits | 9000 kbits |
