Renesas Electronics Corporation Memory 71V65903S85BQ8

The 71V65903S85BQ8 is a 3.3V synchronous SRAM memory device with a capacity of 9 Megabits, organized as 512K x 18 bits. It supports high-speed operation with a maximum clock frequency of 100 MHz, achieving a clock-to-data access time of 8.5 ns. This memory features Zero Bus Turnaround (ZBT) technology, allowing for seamless transitions between read and write operations without dead cycles. The device includes a single read/write control pin and supports burst mode with a four-word capability, which can be configured for either interleaved or linear addressing. It has three chip enable pins for easy depth expansion and individual byte write control. The 71V65903S85BQ8 is available in a 165-ball CABGA package and operates within an industrial temperature range of -40¬8C to +85¬8C. Power-down functionality is controlled via a ZZ input, and the device is compliant with green standards for environmentally friendly applications.