Renesas Electronics Corporation Memory 71V65803S133BQI8

The 71V65803S133BQI8 is a 3.3V synchronous SRAM with a capacity of 9 Megabits, featuring a 256K x 36 memory configuration. It operates at a high speed of 133 MHz, providing a clock-to-data access time of 4.2 ns. This memory device incorporates the Zero Bus Turnaround (ZBT) feature, which eliminates dead cycles between read and write operations, enhancing overall performance. The SRAM supports a single read/write control pin and includes internally synchronized output buffer enable, which simplifies control by removing the need for an output enable signal. It also features a burst capability that allows for four-word data transfers in either linear or interleaved order, making it suitable for high-performance applications. The device is packaged in a 165-ball CABGA format and is available in an industrial temperature range of -40°C to +85°C. Additionally, it includes power-down control via a ZZ input, contributing to energy efficiency in applications. This product is suitable for engineers looking for reliable, high-speed memory solutions in demanding environments.