Renesas Electronics Corporation Memory 71V65803S100PFG8

The 71V65803S100PFG8 is a 3.3V synchronous SRAM with a capacity of 9 Megabits, featuring a 256K x 36 memory configuration. It operates at a high speed of 100 MHz, providing a clock-to-data access time of 5 nanoseconds. This memory device incorporates the Zero Bus Turnaround (ZBT) feature, which eliminates dead cycles between read and write operations, enhancing overall performance in high-speed applications. The SRAM supports a fully pipelined architecture with positive clock-edge triggering for address, data, and control signals. It includes a single read/write control pin and an internally synchronized output buffer, which simplifies control by eliminating the need for an output enable signal. The device also features a burst capability, allowing for four-word bursts in either linear or interleaved order. The 71V65803S100PFG8 is packaged in a 100-pin thin quad flatpack (TQFP) and is suitable for both commercial and industrial temperature ranges, with an operational temperature range of -40¬8C to +85¬8C available for selected speeds. Additionally, it includes individual byte write control and multiple chip enable pins for easy depth expansion.