Renesas Electronics Corporation Memory 71V546S133PFG8

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (128K x 36) Parallel 133MHz 4.2ns 100-TQFP (14x14)
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Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (128K x 36) Parallel 133MHz 4.2ns 100-TQFP (14x14)
Request a Quote
Datasheet
Datasheet Summary
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The 71V546S133PFG8 is a 3.3V synchronous SRAM memory device from Quarktwin Technology Ltd., featuring a configuration of 128K x 36 bits. It operates at a high speed of 133 MHz, providing a clock-to-data access time of 4.2 ns. This memory incorporates Zero Bus Turnaround (ZBT,Ñ¢) technology, which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes pipelined outputs and a burst counter, allowing for efficient data handling with a four-word burst capability in either linear or interleaved order. It is designed with a single read/write control pin and individual byte write controls for flexibility in data management. The 71V546S133PFG8 is packaged in a 100-pin TQFP format, suitable for high-density applications, and is available in both commercial and industrial temperature ranges. This product is ideal for applications requiring high-speed data access and efficient memory management.

Datasheet Summary
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The 71V546S133PFG8 is a 3.3V synchronous SRAM memory device from Quarktwin Technology Ltd., featuring a configuration of 128K x 36 bits. It operates at a high speed of 133 MHz, providing a clock-to-data access time of 4.2 ns. This memory incorporates Zero Bus Turnaround (ZBT,Ñ¢) technology, which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes pipelined outputs and a burst counter, allowing for efficient data handling with a four-word burst capability in either linear or interleaved order. It is designed with a single read/write control pin and individual byte write controls for flexibility in data management. The 71V546S133PFG8 is packaged in a 100-pin TQFP format, suitable for high-density applications, and is available in both commercial and industrial temperature ranges. This product is ideal for applications requiring high-speed data access and efficient memory management.

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V546S133PFG8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (128K x 36) Parallel 133MHz 4.2ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (128K x 36) Parallel 133MHz 4.2ns 100-TQFP (14x14)

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IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V546S133PFG8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V546S133PFG8
Integrated Circuits (ICs) - Memory - Memory 71V546S133PFG8
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V546S133PFG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 100-TQFP (14x14)

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Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V546S133PFG8-ND 71V546S133PFG8 71V546S133PFG8 71V546S133PFG8
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Package Type TQFP; 100-LQFP QFP; TQFP QFP; 100-LQFP
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