Renesas Electronics Corporation Memory 71V416S12BEI

Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 800-2324-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V416S12BEI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V416S12BEI
Integrated Circuits (ICs) - Memory - Memory 71V416S12BEI
IC SRAM 4MBIT PARALLEL 48CABGA

IC SRAM 4MBIT PARALLEL 48CABGA

Supplier's Site
IC SRAM 4MBIT PARALLEL 48CABGA

IC SRAM 4MBIT PARALLEL 48CABGA

Supplier's Site Datasheet
Memory - 71V416S12BEI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 800-2324-ND 71V416S12BEI 71V416S12BEI 71V416S12BEI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
Package Type 48-TFBGA BGA; 48-TFBGA
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