Renesas Electronics Corporation Memory 71V416L12PHG/3247

Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II
Datasheet
Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V416L12PHG/3247 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V416L12PHG/3247 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V416L12PHG/3247
Integrated Circuits (ICs) - Memory - Memory 71V416L12PHG/3247
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V416L12PHG/3247 71V416L12PHG/3247 71V416L12PHG/3247
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 12 ns 12 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 4000 kbits 4000 kbits 4000 kbits
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