Renesas Electronics Corporation Memory 71V416L12BEG

Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 800-71V416L12BEG-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 48CABGA

IC SRAM 4MBIT PARALLEL 48CABGA

Supplier's Site Datasheet
Memory - 71V416L12BEG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 800-71V416L12BEG-ND 71V416L12BEG 71V416L12BEG
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4000 kbits 4000 kbits 4000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

 - 27S181PC-G - Rochester Electronics
Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; PDIP24
View Details
4 suppliers
FIFOs Memory - SN74ACT7200L20NP - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Density 2 kbits
Package Type DIP; 28-DIP (0.300\", 7.62mm)
View Details
Memory - 28093465 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - RAM - MT5C1008DCJ-45/IT - 1221437-MT5C1008DCJ-45/IT - Win Source Electronics
Specs
Operating Temperature -40 C (-40 F)
Density 1000 kbits
Pins 32
View Details