Renesas Electronics Corporation Memory 71V416L10YGI

Description
IC SRAM 4MBIT PARALLEL 44SOJ
Datasheet
Description
IC SRAM 4MBIT PARALLEL 44SOJ
Datasheet

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IC SRAM 4MBIT PARALLEL 44SOJ

IC SRAM 4MBIT PARALLEL 44SOJ

Supplier's Site Datasheet
Memory - 71V416L10YGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-SOJ

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V416L10YGI
Integrated Circuits (ICs) - Memory - Memory 71V416L10YGI
IC SRAM 4MBIT PARALLEL 44SOJ

IC SRAM 4MBIT PARALLEL 44SOJ

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V416L10YGI 71V416L10YGI 71V416L10YGI
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns
Density 4000 kbits 4000 kbits 4000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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