Renesas Electronics Corporation Memory 71V3577S80PFGI

The 71V3577S80PFGI is a 3.3V synchronous SRAM memory device from Quarktwin Technology Ltd., organized as 128K x 36 or 256K x 18. It features a flow-through output architecture, allowing for high-speed data access with a maximum access time of 8.0 ns at 100 MHz clock frequency. The device supports burst mode operation, enabling four cycles of data output for a single address input, which enhances performance in applications requiring rapid data retrieval. This SRAM is designed with a 3.3V core power supply and includes a power-down feature controlled by the ZZ input, ensuring low power consumption during inactive periods. The part is available in a JEDEC standard 100-pin TQFP package and is suitable for both commercial and industrial temperature ranges, with operational temperatures from -40¬8C to +85¬8C for selected speeds. The device also includes various control inputs such as global write enable (GW), byte write enable (BWE), and chip select (CS), making it versatile for different system designs. Engineers considering this product should evaluate its specifications against their project requirements, particularly in terms of speed, power consumption, and temperature tolerance.