Renesas Electronics Corporation Memory 71V3577S75BQG8

Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 117MHz 7.5ns 165-CABGA (13x15)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 117MHz 7.5ns 165-CABGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V3577S75BQG8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 117MHz 7.5ns 165-CABGA (13x15)

SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 117MHz 7.5ns 165-CABGA (13x15)

Buy Now Datasheet
IC SRAM 4.5MBIT PAR 165CABGA

IC SRAM 4.5MBIT PAR 165CABGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3577S75BQG8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3577S75BQG8
Integrated Circuits (ICs) - Memory - Memory 71V3577S75BQG8
IC SRAM 4.5MBIT PAR 165CABGA

IC SRAM 4.5MBIT PAR 165CABGA

Supplier's Site
Memory - 71V3577S75BQG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 117 MHz 7.5 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 117 MHz 7.5 ns 165-CABGA (13x15)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V3577S75BQG8-ND 71V3577S75BQG8 71V3577S75BQG8 71V3577S75BQG8
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Package Type 165-TBGA BGA; 165-TBGA
Unlock Full Specs
to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Memory - 54F189DLQB - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category Volatile
Cycle Time 37.5 ns
Density 0 kbits
View Details
2 suppliers
Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - MYXX28HC256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 70 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 774-CY14B101L-SP35XC - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category NVSRAM; Non-Volatile; SRAM Chip
Access Time 35 ns
Cycle Time 35 ns
View Details
3 suppliers