Renesas Electronics Corporation Memory 71V3577S65PFGI8

Description
IC SRAM 4.5MBIT PARALLEL 100TQFP
Datasheet
Description
IC SRAM 4.5MBIT PARALLEL 100TQFP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site Datasheet
Memory - 71V3577S65PFGI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 133 MHz 6.5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 133 MHz 6.5 ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3577S65PFGI8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3577S65PFGI8
Integrated Circuits (ICs) - Memory - Memory 71V3577S65PFGI8
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3577S65PFGI8 71V3577S65PFGI8 71V3577S65PFGI8
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 6.5 ns 6.5 ns
Density 4500 kbits 4500 kbits 4500 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - NM27C040Q170 - Rochester Electronics
Texas Instruments
Specs
Memory Category PROM
Package Type DIP; CDIP32
View Details
3 suppliers
Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-8764814QYA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 250 ns
Density 512 kbits
View Details