Renesas Electronics Corporation Memory 71V3576S133PFGI8

Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 133MHz 4.2ns 100-TQFP (14x14)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 133MHz 4.2ns 100-TQFP (14x14)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V3576S133PFGI8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 133MHz 4.2ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 133MHz 4.2ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3576S133PFGI8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3576S133PFGI8
Integrated Circuits (ICs) - Memory - Memory 71V3576S133PFGI8
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site Datasheet
Memory - 71V3576S133PFGI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 100-TQFP (14x14)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V3576S133PFGI8-ND 71V3576S133PFGI8 71V3576S133PFGI8 71V3576S133PFGI8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Package Type TQFP; 100-LQFP QFP; 100-LQFP
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4C1259 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 100 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 28055481 B - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882745 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory - 28C64A-20B/UC - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 200 ns
Density 64 kbits
View Details