Renesas Electronics Corporation Memory 71V35761S200BGG8

Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)
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Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Memory - 71V35761S200BGG8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)

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Memory - 71V35761S200BGG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

Buy Now Datasheet
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V35761S200BGG8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V35761S200BGG8
Integrated Circuits (ICs) - Memory - Memory 71V35761S200BGG8
IC SRAM 4.5MBIT PAR 119PBGA

IC SRAM 4.5MBIT PAR 119PBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V35761S200BGG8-ND 71V35761S200BGG8 71V35761S200BGG8 71V35761S200BGG8
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Package Type BGA; 119-BGA BGA; 119-BGA
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