Renesas Electronics Corporation Memory 71V35761S200BG

Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)
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Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V35761S200BG-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)

Buy Now
Memory - 71V35761S200BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

Buy Now Datasheet
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V35761S200BG-ND 71V35761S200BG 71V35761S200BG
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits
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