Renesas Electronics Corporation Memory 71V35761S200BG

Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)
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Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V35761S200BG-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 200MHz 3.1ns 119-PBGA (14x22)

Buy Now
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet
Memory - 71V35761S200BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V35761S200BG-ND 71V35761S200BG 71V35761S200BG
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits
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