The 71V35761S183BGGI8 is a 128K x 36-bit synchronous SRAM from Quarktwin Technology Ltd., designed for high-speed applications. It operates at a core voltage of 3.3V and features pipelined outputs, allowing for efficient data handling. The device supports burst mode operation, providing four cycles of data output for a single address, which enhances performance in data-intensive applications. It has a clock access time of 3.3ns at a frequency of 183MHz, making it suitable for systems requiring fast memory access. The SRAM includes a power-down feature controlled by the ZZ input, which helps reduce power consumption during idle periods. It is available in multiple package options, including a 100-pin thin quad flatpack (TQFP) and ball grid array (BGA) configurations. The device is also compliant with the IEEE 1149.1 JTAG standard, offering optional boundary scan capabilities. Additionally, it is available in an industrial temperature range of -40¬8C to +85¬8C for selected speeds, making it suitable for various environmental conditions.
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 183MHz 3.3ns 119-PBGA (14x22)
IC SRAM 4.5MBIT PARALLEL 119PBGA
IC SRAM 4.5MBIT PAR 119PBGA
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 183 MHz 3.3 ns 119-PBGA (14x22)
| DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V35761S183BGGI8-ND | 71V35761S183BGGI8 | 71V35761S183BGGI8 | 71V35761S183BGGI8 |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 4500 kbits | 4500 kbits | 4500 kbits | 4500 kbits |
| Package Type | BGA; 119-BGA | BGA; 119-BGA |
