Renesas Electronics Corporation Memory 71V35761S183BGGI8

Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 183MHz 3.3ns 119-PBGA (14x22)
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Description
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 183MHz 3.3ns 119-PBGA (14x22)
Request a Quote
Datasheet
Datasheet Summary
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The 71V35761S183BGGI8 is a 128K x 36-bit synchronous SRAM from Quarktwin Technology Ltd., designed for high-speed applications. It operates at a core voltage of 3.3V and features pipelined outputs, allowing for efficient data handling. The device supports burst mode operation, providing four cycles of data output for a single address, which enhances performance in data-intensive applications. It has a clock access time of 3.3ns at a frequency of 183MHz, making it suitable for systems requiring fast memory access. The SRAM includes a power-down feature controlled by the ZZ input, which helps reduce power consumption during idle periods. It is available in multiple package options, including a 100-pin thin quad flatpack (TQFP) and ball grid array (BGA) configurations. The device is also compliant with the IEEE 1149.1 JTAG standard, offering optional boundary scan capabilities. Additionally, it is available in an industrial temperature range of -40¬8C to +85¬8C for selected speeds, making it suitable for various environmental conditions.

Datasheet Summary
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The 71V35761S183BGGI8 is a 128K x 36-bit synchronous SRAM from Quarktwin Technology Ltd., designed for high-speed applications. It operates at a core voltage of 3.3V and features pipelined outputs, allowing for efficient data handling. The device supports burst mode operation, providing four cycles of data output for a single address, which enhances performance in data-intensive applications. It has a clock access time of 3.3ns at a frequency of 183MHz, making it suitable for systems requiring fast memory access. The SRAM includes a power-down feature controlled by the ZZ input, which helps reduce power consumption during idle periods. It is available in multiple package options, including a 100-pin thin quad flatpack (TQFP) and ball grid array (BGA) configurations. The device is also compliant with the IEEE 1149.1 JTAG standard, offering optional boundary scan capabilities. Additionally, it is available in an industrial temperature range of -40¬8C to +85¬8C for selected speeds, making it suitable for various environmental conditions.

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V35761S183BGGI8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 183MHz 3.3ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mb (128K x 36) Parallel 183MHz 3.3ns 119-PBGA (14x22)

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Integrated Circuits (ICs) - Memory - Memory - 71V35761S183BGGI8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V35761S183BGGI8
Integrated Circuits (ICs) - Memory - Memory 71V35761S183BGGI8
IC SRAM 4.5MBIT PAR 119PBGA

IC SRAM 4.5MBIT PAR 119PBGA

Supplier's Site
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet
Memory - 71V35761S183BGGI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 183 MHz 3.3 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 183 MHz 3.3 ns 119-PBGA (14x22)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V35761S183BGGI8-ND 71V35761S183BGGI8 71V35761S183BGGI8 71V35761S183BGGI8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4500 kbits 4500 kbits 4500 kbits 4500 kbits
Package Type BGA; 119-BGA BGA; 119-BGA
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