Renesas Electronics Corporation Memory 71V3559S80PFG

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)
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Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)
Request a Quote
Datasheet
Datasheet Summary
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The IDT71V3559S80PFG is a 3.3V synchronous SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It supports a maximum operating frequency of 100 MHz, providing a clock-to-data access time of 7.5 ns. This SRAM features Zero Bus Turnaround (ZBT,Ñ¢), which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes a burst counter that allows for four cycles of data output for a single address, with the burst order selectable between linear and interleaved modes via the LBO pin. It has three chip enable pins (CE1, CE2, CE2) for easy depth expansion and a single read/write control pin. The output is flow-through, meaning there is no output data register, which simplifies the control logic. The IDT71V3559S80PFG is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), making it suitable for various applications requiring compact design. It operates with a power supply of 3.3V (¬±5%) and includes optional JTAG boundary scan functionality. This product is ideal for engineers looking for high-performance memory solutions in synchronous applications.

Datasheet Summary
Powered by GS/AI

The IDT71V3559S80PFG is a 3.3V synchronous SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It supports a maximum operating frequency of 100 MHz, providing a clock-to-data access time of 7.5 ns. This SRAM features Zero Bus Turnaround (ZBT,Ñ¢), which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes a burst counter that allows for four cycles of data output for a single address, with the burst order selectable between linear and interleaved modes via the LBO pin. It has three chip enable pins (CE1, CE2, CE2) for easy depth expansion and a single read/write control pin. The output is flow-through, meaning there is no output data register, which simplifies the control logic. The IDT71V3559S80PFG is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), making it suitable for various applications requiring compact design. It operates with a power supply of 3.3V (¬±5%) and includes optional JTAG boundary scan functionality. This product is ideal for engineers looking for high-performance memory solutions in synchronous applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V3559S80PFG-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)

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Memory - 71V3559S80PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 100-TQFP (14x14)

Buy Now Datasheet
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3559S80PFG-ND 71V3559S80PFG 71V3559S80PFG
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits
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