Renesas Electronics Corporation Memory 71V3559S80PFG

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)
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Description
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)
Request a Quote
Datasheet
Datasheet Summary
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The IDT71V3559S80PFG is a 3.3V synchronous SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It supports a maximum operating frequency of 100 MHz, providing a clock-to-data access time of 7.5 ns. This SRAM features Zero Bus Turnaround (ZBT,Ñ¢), which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes a burst counter that allows for four cycles of data output for a single address, with the burst order selectable between linear and interleaved modes via the LBO pin. It has three chip enable pins (CE1, CE2, CE2) for easy depth expansion and a single read/write control pin. The output is flow-through, meaning there is no output data register, which simplifies the control logic. The IDT71V3559S80PFG is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), making it suitable for various applications requiring compact design. It operates with a power supply of 3.3V (¬±5%) and includes optional JTAG boundary scan functionality. This product is ideal for engineers looking for high-performance memory solutions in synchronous applications.

Datasheet Summary
Powered by GS/AI

The IDT71V3559S80PFG is a 3.3V synchronous SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It supports a maximum operating frequency of 100 MHz, providing a clock-to-data access time of 7.5 ns. This SRAM features Zero Bus Turnaround (ZBT,Ñ¢), which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes a burst counter that allows for four cycles of data output for a single address, with the burst order selectable between linear and interleaved modes via the LBO pin. It has three chip enable pins (CE1, CE2, CE2) for easy depth expansion and a single read/write control pin. The output is flow-through, meaning there is no output data register, which simplifies the control logic. The IDT71V3559S80PFG is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), making it suitable for various applications requiring compact design. It operates with a power supply of 3.3V (¬±5%) and includes optional JTAG boundary scan functionality. This product is ideal for engineers looking for high-performance memory solutions in synchronous applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V3559S80PFG-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 8ns 100-TQFP (14x14)

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IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site Datasheet
Memory - 71V3559S80PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 100-TQFP (14x14)

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Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3559S80PFG-ND 71V3559S80PFG 71V3559S80PFG
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits
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