The 71V3558SA100BQG is a 3.3V synchronous SRAM memory device featuring a 128K x 36 configuration. It operates at a maximum speed of 100 MHz with a clock-to-data access time of 5 ns. This memory device supports the Zero Bus Turnaround (ZBT) feature, allowing for seamless transitions between read and write operations without dead cycles. It includes a burst counter for efficient data handling, capable of providing four cycles of data for a single address input, with options for linear or interleaved burst sequences. The device is designed with a single read/write control pin and three chip enable pins for easy depth expansion. It is packaged in a 165-ball CABGA format, suitable for applications requiring compact and efficient memory solutions. The operational temperature range is from -40¬8C to +85¬8C for industrial applications, and green parts are available. This product is suitable for high-performance systems that require reliable and fast memory access.
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mb (256K x 18) Parallel 100MHz 5ns 165-CABGA (13x15)
IC SRAM 4.5MBIT PAR 165CABGA
IC SRAM 4.5MBIT PAR 165CABGA
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 100 MHz 5 ns 165-CABGA (13x15)
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V3558SA100BQG-ND | 71V3558SA100BQG | 71V3558SA100BQG | 71V3558SA100BQG |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 4500 kbits | 4500 kbits | 4500 kbits | 4500 kbits |
| Package Type | 165-TBGA | BGA | BGA; 165-TBGA |
