Renesas Electronics Corporation Memory 71V25761S200PFGI8

Description
IC SRAM 4.5MBIT PARALLEL 100TQFP
Datasheet
Description
IC SRAM 4.5MBIT PARALLEL 100TQFP
Datasheet

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IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site Datasheet
Memory - 71V25761S200PFGI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V25761S200PFGI8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V25761S200PFGI8
Integrated Circuits (ICs) - Memory - Memory 71V25761S200PFGI8
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V25761S200PFGI8 71V25761S200PFGI8 71V25761S200PFGI8
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 3.1 ns 3.1 ns
Density 4500 kbits 4500 kbits 4500 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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