Renesas Electronics Corporation Memory 71V25761S200BG8

Description
IC SRAM 4.5MBIT PARALLEL 119PBGA
Datasheet
Description
IC SRAM 4.5MBIT PARALLEL 119PBGA
Datasheet

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IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V25761S200BG8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V25761S200BG8
Integrated Circuits (ICs) - Memory - Memory 71V25761S200BG8
IC SRAM 4.5MBIT PAR 119PBGA

IC SRAM 4.5MBIT PAR 119PBGA

Supplier's Site
Memory - 71V25761S200BG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V25761S200BG8 71V25761S200BG8 71V25761S200BG8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 3.1 ns 3.1 ns
Density 4500 kbits 4500 kbits 4500 kbits
Data Rate 200 MHz
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