Renesas Electronics Corporation Memory 71V25761S183BG

Description
IC SRAM 4.5MBIT PARALLEL 119PBGA
Datasheet
Description
IC SRAM 4.5MBIT PARALLEL 119PBGA
Datasheet

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IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet
Memory - 71V25761S183BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 183 MHz 3.3 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 183 MHz 3.3 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V25761S183BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V25761S183BG
Integrated Circuits (ICs) - Memory - Memory 71V25761S183BG
IC SRAM 4.5MBIT PAR 119PBGA

IC SRAM 4.5MBIT PAR 119PBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V25761S183BG 71V25761S183BG 71V25761S183BG
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 3.3 ns 3.3 ns
Density 4500 kbits 4500 kbits 4500 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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