Renesas Electronics Corporation Memory 71V25761S183BG

Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 183 MHz 3.3 ns 119-PBGA (14x22)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 183 MHz 3.3 ns 119-PBGA (14x22)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V25761S183BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 183 MHz 3.3 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 183 MHz 3.3 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V25761S183BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V25761S183BG
Integrated Circuits (ICs) - Memory - Memory 71V25761S183BG
IC SRAM 4.5MBIT PAR 119PBGA

IC SRAM 4.5MBIT PAR 119PBGA

Supplier's Site
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V25761S183BG 71V25761S183BG 71V25761S183BG
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 3.3 ns 3.3 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits 4500 kbits
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