Renesas Electronics Corporation Memory 71V256SA12YG

Description
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 12ns 28-SOJ
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Description
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 12ns 28-SOJ
Request a Quote
Datasheet
Datasheet Summary
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The 71V256SA12YG is a 256Kbit (32K x 8-bit) high-speed static RAM from Quarktwin Technology Ltd., designed for applications requiring fast access times and low power consumption. It operates with a single 3.3V (¬±0.3V) power supply and features access times as fast as 12ns, making it suitable for high-performance processor secondary cache applications. The device is available in both commercial (0¬8C to +70¬8C) and industrial (,Äì40¬8C to +85¬8C) temperature ranges, catering to diverse environmental needs. This SRAM is packaged in a 28-pin 300 mil SOJ format, which allows for space-efficient layouts in electronic designs. It has a low standby current of 2mA in full standby mode, contributing to extended battery life in portable applications. The inputs and outputs are LVTTL-compatible, ensuring compatibility with modern digital systems. The 71V256SA12YG is produced using advanced high-performance CMOS technology, which enhances reliability and performance.

Datasheet Summary
Powered by GS/AI

The 71V256SA12YG is a 256Kbit (32K x 8-bit) high-speed static RAM from Quarktwin Technology Ltd., designed for applications requiring fast access times and low power consumption. It operates with a single 3.3V (¬±0.3V) power supply and features access times as fast as 12ns, making it suitable for high-performance processor secondary cache applications. The device is available in both commercial (0¬8C to +70¬8C) and industrial (,Äì40¬8C to +85¬8C) temperature ranges, catering to diverse environmental needs. This SRAM is packaged in a 28-pin 300 mil SOJ format, which allows for space-efficient layouts in electronic designs. It has a low standby current of 2mA in full standby mode, contributing to extended battery life in portable applications. The inputs and outputs are LVTTL-compatible, ensuring compatibility with modern digital systems. The 71V256SA12YG is produced using advanced high-performance CMOS technology, which enhances reliability and performance.

Suppliers

Company
Product
Description
Supplier Links
Memory - 800-1466-5-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 12ns 28-SOJ

SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 12ns 28-SOJ

Buy Now Datasheet
Memory IC and Storage Component - 774-71V256SA12YG - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-71V256SA12YG
Memory IC and Storage Component 774-71V256SA12YG
IC SRAM 256KBIT PARALLEL 28SOJ Product overview: 71V256SA12YG from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V256SA12YG can be used for catalog matching and distributor lookup.

IC SRAM 256KBIT PARALLEL 28SOJ Product overview: 71V256SA12YG from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V256SA12YG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SRAM - 71V256SA12YG - 907817-71V256SA12YG - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71V256SA12YG
907817-71V256SA12YG
Memory - SRAM - 71V256SA12YG 907817-71V256SA12YG
Manufacturer: Renesas Electronics America Win Source Part Number: 907817-71V256SA12YG Operating Temperature Range: 0°C ~ 70°C (TA) Features: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 28-SOJ Package: Tube Package: 28-BSOJ (0.300", 7.62mm Width) Mounting: Surface Mount Family Name: 71V256 Categories: Integrated Circuits (ICs) Case / Package: 28-SOJ ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Quantity per package: 27 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Other Part Number: IDT71V256SA12YG, 800-1466-5, 2266-71V256SA12YG, 800-1466, 800-1466-ND

Manufacturer: Renesas Electronics America
Win Source Part Number: 907817-71V256SA12YG
Operating Temperature Range: 0°C ~ 70°C (TA)
Features: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 28-SOJ
Package: Tube
Package: 28-BSOJ (0.300", 7.62mm Width)
Mounting: Surface Mount
Family Name: 71V256
Categories: Integrated Circuits (ICs)
Case / Package: 28-SOJ
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 27
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Other Part Number: IDT71V256SA12YG, 800-1466-5, 2266-71V256SA12YG, 800-1466, 800-1466-ND

Buy Now Datasheet
Memory - 71V256SA12YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 12 ns 28-SOJ

SRAM - Asynchronous Memory IC 256Kbit Parallel 12 ns 28-SOJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V256SA12YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V256SA12YG
Integrated Circuits (ICs) - Memory - Memory 71V256SA12YG
IC SRAM 256KBIT PARALLEL 28SOJ

IC SRAM 256KBIT PARALLEL 28SOJ

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 800-1466-5-ND 774-71V256SA12YG 907817-71V256SA12YG 71V256SA12YG 71V256SA12YG
Product Name Memory Memory IC and Storage Component Memory - SRAM - 71V256SA12YG Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type "28-BSOJ (0.300"", 7.62mm Width)" SOJ; Tube SOJ; 28-SOJ 28-BSOJ (0.300\", 7.62mm Width)
Supply Voltage 3V ~ 3.6V 3.6V; 3V ~ 3.6V 3.6V; 3V ~ 3.6V Surface Mount
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