Renesas Electronics Corporation Memory 71V256SA12PZG

Description
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 12ns 28-TSOP
Request a Quote
Description
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 12ns 28-TSOP
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 71V256SA12PZG is a 256Kbit (32K x 8-bit) high-speed static RAM from Quarktwin Technology Ltd., designed for applications requiring fast access times and low power consumption. It operates with a single 3.3V (±0.3V) power supply and features access times as fast as 12ns, making it suitable for high-performance processor secondary cache applications. The device is available in both commercial (0°C to +70°C) and industrial (,Äì40°C to +85°C) temperature ranges, catering to a variety of environmental conditions. This SRAM is packaged in a compact 28-pin TSOP Type I format, which allows for space-efficient layouts in electronic designs. It boasts low standby current, with a maximum of 2mA in full standby mode, contributing to extended battery life in portable applications. The inputs and outputs are LVTTL-compatible, ensuring compatibility with modern digital systems. The 71V256SA12PZG is produced using advanced high-performance CMOS technology, which enhances its reliability and efficiency.

Datasheet Summary
Powered by GS/AI

The 71V256SA12PZG is a 256Kbit (32K x 8-bit) high-speed static RAM from Quarktwin Technology Ltd., designed for applications requiring fast access times and low power consumption. It operates with a single 3.3V (±0.3V) power supply and features access times as fast as 12ns, making it suitable for high-performance processor secondary cache applications. The device is available in both commercial (0°C to +70°C) and industrial (,Äì40°C to +85°C) temperature ranges, catering to a variety of environmental conditions. This SRAM is packaged in a compact 28-pin TSOP Type I format, which allows for space-efficient layouts in electronic designs. It boasts low standby current, with a maximum of 2mA in full standby mode, contributing to extended battery life in portable applications. The inputs and outputs are LVTTL-compatible, ensuring compatibility with modern digital systems. The 71V256SA12PZG is produced using advanced high-performance CMOS technology, which enhances its reliability and efficiency.

Suppliers

Company
Product
Description
Supplier Links
Memory - 800-1465-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 12ns 28-TSOP

SRAM - Asynchronous Memory IC 256Kb (32K x 8) Parallel 12ns 28-TSOP

Buy Now Datasheet
IC SRAM 256KBIT PARALLEL 28TSOP

IC SRAM 256KBIT PARALLEL 28TSOP

Supplier's Site Datasheet
Memory - 71V256SA12PZG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 12 ns 28-TSOP

SRAM - Asynchronous Memory IC 256Kbit Parallel 12 ns 28-TSOP

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 800-1465-ND 71V256SA12PZG 71V256SA12PZG
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type TSSOP; "28-TSSOP (0.465"", 11.80mm Width)" SSOP; TSSOP; 28-TSSOP (0.465\", 11.80mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ44400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - 71V256SA20PZG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 256 kbits
View Details