Renesas Electronics Corporation Memory 71V256S10YG

Description
SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-SOJ
Datasheet
Description
SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-SOJ
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V256S10YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-SOJ

SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-SOJ

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Integrated Circuits (ICs) - Memory - Memory - 71V256S10YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V256S10YG
Integrated Circuits (ICs) - Memory - Memory 71V256S10YG
IC SRAM 256KBIT PARALLEL 28SOJ

IC SRAM 256KBIT PARALLEL 28SOJ

Supplier's Site
IC SRAM 256KBIT PARALLEL 28SOJ

IC SRAM 256KBIT PARALLEL 28SOJ

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V256S10YG 71V256S10YG 71V256S10YG
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 256 kbits 256 kbits 256 kbits
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