Renesas Electronics Corporation Memory 71V016SA20BFGI8

Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 48-CABGA (7x7)
Datasheet
Description
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 48-CABGA (7x7)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V016SA20BFGI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 48-CABGA (7x7)

SRAM - Asynchronous Memory IC 1Mbit Parallel 20 ns 48-CABGA (7x7)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V016SA20BFGI8
Integrated Circuits (ICs) - Memory - Memory 71V016SA20BFGI8
IC SRAM 1MBIT PARALLEL 48CABGA

IC SRAM 1MBIT PARALLEL 48CABGA

Supplier's Site
IC SRAM 1MBIT PARALLEL 48FBGA

IC SRAM 1MBIT PARALLEL 48FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V016SA20BFGI8 71V016SA20BFGI8 71V016SA20BFGI8
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 20 ns 20 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420770 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - 16-3459-02-T - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS29F010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details