Renesas Electronics Corporation Memory 71T75802S200BGG

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (1M x 18) Parallel 200MHz 3.2ns 119-PBGA (14x22)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (1M x 18) Parallel 200MHz 3.2ns 119-PBGA (14x22)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71T75802S200BGG-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (1M x 18) Parallel 200MHz 3.2ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (1M x 18) Parallel 200MHz 3.2ns 119-PBGA (14x22)

Buy Now
Memory - 71T75802S200BGG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 200 MHz 3.2 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 200 MHz 3.2 ns 119-PBGA (14x22)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 119PBGA

IC SRAM 18MBIT PARALLEL 119PBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71T75802S200BGG-ND 71T75802S200BGG 71T75802S200BGG
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V124SA10PHG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Density 1000 kbits
View Details
Memory - 40060586 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - MT5C1009 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details